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A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

Identifieur interne : 015B69 ( Main/Repository ); précédent : 015B68; suivant : 015B70

A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

Auteurs : RBID : Pascal:98-0398690

Descripteurs français

Pascal (Inist)
- 8560G, 0757K, 7240, 8530D, 8105E, 6865, 7320D, 7361E, 8530V, Etude expérimentale, Gallium arséniure, Indium composé, Aluminium composé, Semiconducteur III-V, Superréseau semiconducteur, Puits quantique semiconducteur, Photodétecteur, Détecteur IR, Photoconductivité, Bruit dispositif semiconducteur.

English descriptors

KwdEn :
- Aluminium compounds, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Infrared detectors, Photoconductivity, Photodetectors, Semiconductor device noise, Semiconductor quantum wells, Semiconductor superlattices.

Abstract

A normal incidence p-type compressively strained layer superlattice (SL) In_0.27Ga_0.73As/Al_0.15Ga_0.85As quantum well infrared photodetector with a spectral response peak at 19.2 μm and a cutoff wavelength λ_c>20 μm under moderate background illumination have been demonstrated in this work. A responsivity of 50 mA/W and a gain-quantum efficiency product (ηg) of 0.32% at V_b=20 mV and T=40 K were obtained for this device. The device layer structure consists of four InGaAs/AlGaAs SL-absorber layers sandwiched by wide GaAs barrier layers. Results of the responsivity, dark current, noise, background photocurrent measurements, and analysis of the device performance are discussed. © 1998 American Institute of Physics.

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Pascal:98-0398690

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength</title>
<author><name sortKey="Chu, J" uniqKey="Chu J">J. Chu</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Floride</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Li, Sheng S" uniqKey="Li S">Sheng S. Li</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Floride</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Singh, A" uniqKey="Singh A">A. Singh</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Phillips Laboratories (PL/VTMR), Kirtland AFB, New Mexico 87117</s1>
<sZ>3 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Phillips Laboratories (PL/VTMR), Kirtland AFB</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Ho, P" uniqKey="Ho P">P. Ho</name>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Lockheed Sanders, Nashua, New Hampshire 03061</s1>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">New Hampshire</region>
</placeName>
<wicri:cityArea>Lockheed Sanders, Nashua</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">98-0398690</idno>
<date when="1998-09-21">1998-09-21</date>
<idno type="stanalyst">PASCAL 98-0398690 AIP</idno>
<idno type="RBID">Pascal:98-0398690</idno>
<idno type="wicri:Area/Main/Corpus">016781</idno>
<idno type="wicri:Area/Main/Repository">015B69</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Infrared detectors</term>
<term>Photoconductivity</term>
<term>Photodetectors</term>
<term>Semiconductor device noise</term>
<term>Semiconductor quantum wells</term>
<term>Semiconductor superlattices</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8560G</term>
<term>0757K</term>
<term>7240</term>
<term>8530D</term>
<term>8105E</term>
<term>6865</term>
<term>7320D</term>
<term>7361E</term>
<term>8530V</term>
<term>Etude expérimentale</term>
<term>Gallium arséniure</term>
<term>Indium composé</term>
<term>Aluminium composé</term>
<term>Semiconducteur III-V</term>
<term>Superréseau semiconducteur</term>
<term>Puits quantique semiconducteur</term>
<term>Photodétecteur</term>
<term>Détecteur IR</term>
<term>Photoconductivité</term>
<term>Bruit dispositif semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A normal incidence p-type compressively strained layer superlattice (SL) In<sub>0.27</sub>
Ga<sub>0.73</sub>
As/Al<sub>0.15</sub>
Ga<sub>0.85</sub>
As quantum well infrared photodetector with a spectral response peak at 19.2 μm and a cutoff wavelength λ<sub>c</sub>
>20 μm under moderate background illumination have been demonstrated in this work. A responsivity of 50 mA/W and a gain-quantum efficiency product (ηg) of 0.32% at V<sub>b</sub>
=20 mV and T=40 K were obtained for this device. The device layer structure consists of four InGaAs/AlGaAs SL-absorber layers sandwiched by wide GaAs barrier layers. Results of the responsivity, dark current, noise, background photocurrent measurements, and analysis of the device performance are discussed. © 1998 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>73</s2>
</fA05>
<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>CHU (J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LI (Sheng S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SINGH (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HO (P.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Phillips Laboratories (PL/VTMR), Kirtland AFB, New Mexico 87117</s1>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Lockheed Sanders, Nashua, New Hampshire 03061</s1>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>1664-1666</s1>
</fA20>
<fA21><s1>1998-09-21</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 1998 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>98-0398690</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A normal incidence p-type compressively strained layer superlattice (SL) In<sub>0.27</sub>
Ga<sub>0.73</sub>
As/Al<sub>0.15</sub>
Ga<sub>0.85</sub>
As quantum well infrared photodetector with a spectral response peak at 19.2 μm and a cutoff wavelength λ<sub>c</sub>
>20 μm under moderate background illumination have been demonstrated in this work. A responsivity of 50 mA/W and a gain-quantum efficiency product (ηg) of 0.32% at V<sub>b</sub>
=20 mV and T=40 K were obtained for this device. The device layer structure consists of four InGaAs/AlGaAs SL-absorber layers sandwiched by wide GaAs barrier layers. Results of the responsivity, dark current, noise, background photocurrent measurements, and analysis of the device performance are discussed. © 1998 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B00G57K</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70B40</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B60H65</s0>
</fC02>
<fC02 i1="07" i2="3"><s0>001B70C20D</s0>
</fC02>
<fC02 i1="08" i2="3"><s0>001B70C61E</s0>
</fC02>
<fC02 i1="09" i2="X"><s0>001D03F20</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8560G</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>0757K</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7240</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8530D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>6865</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>7320D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>7361E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>8530V</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor superlattices</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Photodétecteur</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Photodetectors</s0>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Détecteur IR</s0>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Infrared detectors</s0>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Photoconductivité</s0>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Photoconductivity</s0>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Bruit dispositif semiconducteur</s0>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Semiconductor device noise</s0>
</fC03>
<fN21><s1>264</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9822M000062</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

A normal incidence p-type strain layer quantum well infrared photodetector with 19.2 μm peak detection wavelength

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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